DC and RF techniques for computing the series resistance of the equivalent electrical circuit for semiconductor lasers

1999 ◽  
Vol 20 (4) ◽  
pp. 258-261
Author(s):  
Horacio L. Martinez-Reyes ◽  
J. Apolinar Reynoso-Hernandez ◽  
F. Javier Mendieta
Keyword(s):  
Semiconductor Lasers ◽  
Series Resistance ◽  
Electrical Circuit ◽  
Equivalent Electrical Circuit

scholarly journals Modulation Performance Enhancement of Directly Modulated Injection-Locked Semiconductor Lasers Using an Equivalent Electrical Circuit

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2409
Author(s):  
Ho-Jun Bae ◽  
Jun-Hyung Cho ◽  
Hyuk-Kee Sung
Keyword(s):  
Frequency Response ◽  
Semiconductor Lasers ◽  
Integrated Circuit ◽  
Performance Enhancement ◽  
Damping Ratio ◽  
Relaxation Oscillation ◽  
Electrical Circuit ◽  
Equivalent Electrical Circuit ◽  
Direct Modulation ◽  
Locking Range

We propose an equivalent electrical circuit model to evaluate the direct modulation performance of optically injection-locked (OIL) semiconductor lasers. We modeled the equivalent circuit of the OIL laser based on alternating complex envelope representations, simulated it using the Simulation Program with Integrated Circuit Emphasis (SPICE), and analyzed the frequency response of the OIL laser. Although the frequency response of the OIL laser is better than that of a free-running laser, its 3-dB modulation performance is degraded by the relaxation oscillation that occurs during direct modulation of the semiconductor laser. To overcome this limitation and maintain the maximum modulation performance within the entire locking range, we also designed an electrical filter to preprocess the electrical modulation signal and compensate for the non-flat modulation output of the OIL laser. The damping ratio of the directly modulated OIL laser increased by 0.101 (280%) and its settling time decreased by >0.037 (44%) when the electrical compensation circuit was added, exhibiting a flat 3-dB modulation bandwidth of 28.79 GHz.

Current measurements across a nematic cell submitted to an external voltage and its equivalent electrical circuit

2008 ◽  
Vol 461 (1-3) ◽  
pp. 164-169 ◽  
Author(s):  
R. Atasiei ◽  
A.L. Alexe-Ionescu ◽  
J.C. Dias ◽  
L.R. Evangelista ◽  
G. Barbero
Keyword(s):  
Electrical Circuit ◽  
Equivalent Electrical Circuit ◽  
External Voltage

Dynamic Modeling of Li-Ion Batteries Using an Equivalent Electrical Circuit

2011 ◽  
Vol 158 (3) ◽  
pp. A326 ◽  
Author(s):  
T. K. Dong ◽  
A. Kirchev ◽  
F. Mattera ◽  
J. Kowal ◽  
Y. Bultel
Keyword(s):  
Dynamic Modeling ◽  
Electrical Circuit ◽  
Equivalent Electrical Circuit ◽  
Li Ion Batteries ◽  
Li Ion

scholarly journals Constructing Accurate Equivalent Electrical Circuit Models of Lithium Iron Phosphate and Lead–Acid Battery Cells for Solar Home System Applications

Energies ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 2305 ◽  
Author(s):  
Yunhe Yu ◽  
Nishant Narayan ◽  
Victor Vega-Garita ◽  
Jelena Popovic-Gerber ◽  
Zian Qin ◽  
...  
Keyword(s):  
Lithium Iron Phosphate ◽  
Electrical Circuit ◽  
Design Stage ◽  
Model Parameters ◽  
Equivalent Electrical Circuit ◽  
Cell Level ◽  
Electrical Equivalent Circuit ◽  
Battery Model ◽  
Vrla Battery ◽  
Lead Acid

The past few years have seen strong growth of solar-based off-grid energy solutions such as Solar Home Systems (SHS) as a means to ameliorate the grave problem of energy poverty. Battery storage is an essential component of SHS. An accurate battery model can play a vital role in SHS design. Knowing the dynamic behaviour of the battery is important for the battery sizing and estimating the battery behaviour for the chosen application at the system design stage. In this paper, an accurate cell level dynamic battery model based on the electrical equivalent circuit is constructed for two battery technologies: the valve regulated lead–acid (VRLA) battery and the LiFePO 4 (LFP) battery. Series of experiments were performed to obtain the relevant model parameters. This model is built for low C-rate applications (lower than 0.5 C-rate) as expected in SHS. The model considers the non-linear relation between the state of charge ( S O C ) and open circuit voltage ( V OC ) for both technologies. Additionally, the equivalent electrical circuit model for the VRLA battery was improved by including a 2nd order RC pair. The simulated model differs from the experimentally obtained result by less than 2%. This cell level battery model can be potentially scaled to battery pack level with flexible capacity, making the dynamic battery model a useful tool in SHS design.

Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition

2020 ◽  
Vol 20 (8) ◽  
pp. 4884-4891
Author(s):  
Rawiwan Chaleawpong ◽  
Nathaporn Promros ◽  
Peerasil Charoenyuenyao ◽  
Phongsaphak Sittimart ◽  
Satoshi Takeichi ◽  
...  
Keyword(s):  
Plasma Deposition ◽  
Electrical Circuit ◽  
Circuit Model ◽  
Arc Plasma ◽  
Equivalent Electrical Circuit ◽  
Type Silicon ◽  
Ultrananocrystalline Diamond ◽  
Electrical Circuit Model ◽  
Equivalent Electrical Circuit Model ◽  
P Type

Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature in order to calculate the requisite junction parameters using the Cheung and Norde approaches. For the calculation based on the Cheung approach, the series resistance (Rs), ideality factor (n) and barrier height (Φb) were 4.58 kΩ, 2.82 and 0.75 eV, respectively. The values of Rs and Φb were in agreement with those calculated using the Norde approach. Their characteristics for alternative current impedance at different frequency values were measured and analyzed as a function of the voltage (V) values ranging from 0 V to 0.5 V. Appearance of the real (Z′) and imaginary (Z″) characteristics for all V values presented single semicircles. The centers of the semicircular curves were below the Z′ axis and the diameter of the semicircles decreased with increments of the V value. The proper equivalent electrical circuit model for the manufactured heterojunction behavior was comprised of Rs combined with the parallel circuit of resistance and constant phase element.

Sign in / Sign up

Export Citation Format

Share Document